Control of dislocation clusters by artificially-introduced micro-twins in cast-mono silicon

Journal of Crystal Growth(2022)

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摘要
•Constitutional supercooling was generated by B-In co-doping in CM-Si.•〈112〉-orientated Micro-twins were introduced due to constitutional supercooling.•Micro-twins can modulate dislocations by producing grain boundaries.•The method to suppress dislocation is economical and feasible in CM-Si.
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关键词
A1. Dislocation cluster,A1. Micro-twin,A1. Defect engineering,A1. Constitutional supercoiling,B1. Cast-mono silicon growth,B3. Solar cells
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