Effects of Gadolinium Precursors on the Magnetic Properties of Gadolinium-doped Gallium Nitride for Spintronic Applications

The role of metal-organic precursors specifically gadolinium precursors on the resulting magnetic properties of gadolinium-doped gallium nitride (GaGdN) is investigated. Gadolinium-doping is expected to render spin-related magnetic properties in GaN for spintronic applications. To achieve and understand this, GaGdN was grown using metal-organic chemical vapor deposition using two types of gadolinium precursors - tris (2,2,6,6-tetramethyl-3,5-heptanedionate) gadolinium ((TMHD)(3)Gd) and tris(cyclopentadienyl) gadolinium (Cp3Gd). GaGdN grown using (TMHD)(3)Gd showed Anomalous Hall Effect and ferromagnetism at room temperature (RT). GaGdN grown using Cp3Gd showed ordinary Hall Effect with no signs of ferromagnetism or any spin polarization. Oxygen from (TMHD)(3)Gd incorporated in GaGdN during the MOCVD growth could be responsible for the differences in magnetic properties. GaGdN shows properties at RT that are conducive for spintronic applications. However, metal-organic precursors and corresponding presence of oxygen significantly influence the spin-related capabilities of GaGdN. This work contributes towards understanding the mechanisms for spin-related properties of GaGdN that can enable its RT spintronic applications.