Enhancement of resistive switching behavior of organic resistive random access memory devices through UV-Ozone treatment

We fabricated organic resistive random-access memory (RRAM) devices using a low-cost solution-process method. All the processes were performed at temperatures below 135 degrees C under ambient atmospheric conditions. The RRAM resistive switching layer was formed from a polymer-fullerene bulk heterojunction using poly(3-hexylthiophene-2,5-diyl) (P3HT) and (6,6)-phenyl C61 butyric acid methyl ester (PCBM). The fabricated organic RRAM device exhibited typical nonvolatile bipolar resistive switching behavior with an ON/OFF ratio of similar to 40, but it provided a low endurance of 27 cycles. Therefore, for enhanced stability, simple UV-Ozone (UVO) treatment was applied to the P3HT:PCBM organic bulk heterojunction layer. The organic RRAM device with UVO treatment exhibited an enhanced performance with an ON/OFF ratio of similar to 400 and an endurance of 47 cycles. In addition, complementary resistive switching behavior was observed. The conduction mechanisms of the organic RRAM device were investigated by fitting the measured I-V data to numerical equations, and Schottky emission and Ohmic conduction were the main conduction mechanisms for the high-resistance and low-resistance states for the RRAM device with or without UVO treatment.