Effect of annealing and oxygen partial pressure on the RF sputtered WO3 thin films for electrochromic applications

K. Naveen Kumar,Habibuddin Shaik,Amulya Pawar, L. N. Chandrashekar,Sheik Abdul Sattar,G. Nithya,R. Imran Jafri,V. Madhavi,Jyothi Gupta,G. V. Ashok Reddy

Materials Today: Proceedings（2022）

引用 12|浏览2

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摘要

•WO3 thin films deposited using RF magnetron sputtering at different oxygen partial pressure.•Annealed at 400 °C.•XRD studies.•Optcal bandgap varying with annealing temperature at different oxygen partial pressure.•Diffusion coefficient varying with annealing temperature at different oxygen partial pressure.

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关键词

Tungsten oxide (WO3),RF magnetron sputtering,Annealing,Partial pressures,Transmittance

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