Study of Ga_2O-=SUB=-3-=/SUB=- deposition by MOVPE from trimethylgallium and oxygen in a wide temperature range

Lundin W.V.,Rodin S.N., Sakharov A.V., Tsatsulnikov A.F.,Lobanova A.V., Bogdanov M.V.,Talalaev R.A.,Haiding Sun,Shibing Long

Technical Physics Letters（2022）

引用 0|浏览2

暂无评分

摘要

Study of Ga2O3 deposition by MOVPE using trimethylgallium and oxygen was performed in a wide temperature range. It was found that for Ga2O3 deposition rate vs temperature dependence is very close to the TMGa pyrolysis in nitrogen. Kinetically-limited range for these processes corresponds to 550-700oC, that is 150oC higher, then for GaN deposition in the same reactor. Keywords: gallium oxide, MOVPE

查看译文

关键词

trimethylgallium,movpe,oxygen

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要