Effects of JFET Region Design and Gate Oxide Thickness on the Static and Dynamic Performance of 650 V SiC Planar Power MOSFETs
Materials（2022）
Key words
SiC power MOSFET,JFET width,JFET doping concentration,gate oxide thickness,orthogonal P,layout,gate-drain capacitance,high-frequency figure-of-merit (HF-FOM)
AI Read Science
Must-Reading Tree
Example
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined