Research on dopant distribution of multi-energy boron implantations into c-SiC

With increasing demands and requirements on power devices and detectors, silicon carbide (SiC) devices currently are of great potential and prospects. In the manufacturing process of SiC and traditional semiconductor devices, ion implantation is a critical doping technology. The multiple-energy implantation into crystal c-SiC substrate can be used for uniform doping realization, but has not been studied sufficiently. In this paper, the multi-energy implantation of boron into c-SiC is studied. The distribution of boron is analyzed with secondary ion mass spectroscopy (SIMS) method, simulated with SRIM and modeled with Pearson function. We compare the parameters extracted in this experiment and the corresponding parameters calculated by other models. It is found that there is almost no deviation of parameter σ for the implantation at energy of 54keV that is firstly carried out. Whereas there are significant differences for the subsequent implantations at higher energies. Specifically, the values experimentally extracted here are smaller than the reference values. It seems that the higher the implantation energy, the larger the deviation. Thus, it is reasonable to attribute the deviation of parameter σ to the implantation damage.