Total Ionizing Dose Assessment of a Commercial 200V PMOSFET

R Aniceto,R Milanowski,S Moro,N Hall,B Vermeire, J Shields,K Cahoy

2018 IEEE Radiation Effects Data Workshop (REDW)（2018）

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摘要

Total ionizing dose testing of commercial 200 V PMOSFETs. At 100 kRad(Si), observed V _t increase of ~ 3 V for biased ON devices and increase of ~ 1 V for biased OFF devices. The R _{ds_on} did not degrade with dose.

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关键词

total ionizing dose testing,total ionizing dose assessment,biased OFF devices,biased ON devices,commercial PMOSFETs,voltage 200.0 V,Si

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