Spin-current in a Magnetic Semiconductor Tunnel Junction: Effect of External Bias Voltage

Communications in Physics(2022)

Cited 0|Views2
No score
Abstract
This paper investigates spin-current transport in a GaMnAs/GaAs/GaMnAs magnetic semiconductor tunnel junctions under applied bias voltages. The 30-band k.p approach is used to describe the materials within the heterostructure, incorporating both spin-orbit and exchange interactions. We use the transfer-matrix formalism to derive numerical solutions for the wave functions. At specific bias values, we calculate the polarization of the spin-current component along the z direction of the structure. We show oscillations of the two spin-current components perpendicular to the magnetization with equal polarization amplitude and characteristic period. The polarization amplitude varies around 10%, reflecting the typical polarization in such type of material. The oscillation period - which relates to the Larmor frequency for spin precession - increases with the bias voltage values.
More
Translated text
Key words
magnetic semiconductor tunnel junction,spin-current
AI Read Science
Must-Reading Tree
Example
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined