In0.53Ga0.47As/AlAs Double-Barrier Resonant Tunnelling Diodes With High-Power Performance in the Low-Terahertz Band

We report about an In 0.53 Ga 0.47 As/AlAs doublebarrier resonant tunnelling diode (RTD) epitaxial structure that features high-power capabilities at low-terahertz frequencies (∼ 100−300 GHz). The heterostructure was designed using a TCAD-based quantum transport simulator and experimentally investigated through the fabrication and characterisation of RTD devices. The high-frequency RF power performance of the epitaxial structure was analysed based on the extracted small-signal equivalent circuit parameters. Our analysis shows that a 9 µm ² , 16 µm ² , and 25 µm ² large RTD device can be expected to deliver around 2 mW, 4 mW, and 6 mW of RF power at 300 GHz.