Charge Transport in Semi Insulating Bulk 4h-Silicon Carbide: Effect of Metallization and Wafer Homogeneity

Petr Praus,Marian Betušiak,Eduard Belas,Jan Kunc,Roman Grill,Mykola Brynza,Jindřich Pipek

SSRN Electronic Journal（2022）

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摘要

•The space charge ∼1014 cm−3 is formed in the sensors after 104 s biasing.•Different sensors polarize at DC bias in the time interval of 0.2–270 s.•Different metallization has a minor effect on velocity of the space charge formation.•The polarization rate is influenced by the wafer spatial inhomogeneity.•Sensor with graphene contact shows significantly different transport characteristics.

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关键词

4H-SiC,Time of Flight,Alpha spectroscopy,Metallization,Polarization effect

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