Study on Small Dead Area High-Voltage Silicon Pin Detectors

The purpose of this work is to investigate the effect of dicing damages on breakdown voltage of silicon PIN detectors to achieve small dead area high-voltage detectors. A numerical simulation study has been carried out by introducing traps at detector die edge to simulate the dicing defects and cracks. The experimental results from the electrical characterization of the high-voltage silicon PIN detectors before and after different dicing methods, are presented. It's concluded based on the agreement between simulation and experimental results that the edge width of about 1 mm is relatively safe to avoid the electrical breakdown due to defects at die edge, which ensures that the breakdown voltage of the detectors can reach 1000V.