Enhancing the luminescence yield of Cr3+ in beta-Ga2O3 by proton irradiation

In situ ion-beam-induced luminescence measurements reveal a strong enhancement of the Cr3+ emission yield in electrically conductive chromium doped beta-Ga2O3 single crystals upon proton irradiation. The observed effect can be explained based on the Fermi-level pinning caused by radiation defects. This pinning of the Fermi level activates deep carrier traps that can act as sensitizers of the Cr3+ emission. In agreement with this model, in semi-insulating samples, where the Fermi level lies deep in the bandgap, the Cr3+ emission is present already in as-grown samples, and no enhancement of its intensity is observed upon proton irradiation. The boost of the Cr3+ emission yield by irradiation, observed in conductive samples, is reversed by thermal annealing in argon at temperatures above 550 ? for 30 s. The results reveal a high potential of Cr-doped beta-Ga2O3 for in situ and ex situ optical radiation detection and dosimetry. Published under an exclusive license by AIP Publishing.