Two inch diameter, highly conducting bulk beta-Ga2O3 single crystals grown by the Czochralski method

Two inch diameter, highly conducting (Si-doped) bulk beta-Ga2O3 single crystals with the cylinder length up to one inch were grown by the Czochralski method. The obtained crystals revealed high structural quality characterized by narrow x-ray rocking curves (FWHM <= 25 arc sec) and high surface smoothness (RMS < 200 pm) of the epi-ready wafers. The free electron concentration and Hall mobility at room temperature were in the range of 1.6-9 x 10(18) cm(-3) and 118 - 52 cm(2) V-1 s(-1), respectively, which are not affected by a heat treatment at temperatures up to 1000 degrees C in an oxidizing atmosphere. Temperature-dependent electrical properties of the crystals revealed a degenerated semiconducting state. Both high structural quality and electrical properties make the crystals well suited as substrates for homoepitaxy and electronic device fabrication in the vertical configuration. (C) 2022 Author(s).