Simulation of abrasive polishing process of single crystal silicon based on molecular dynamics

Molecular dynamics simulation is used to simulate the polishing process of silicon in this paper. Several models such as single abrasive and multi-abrasive are established for simulation analysis. The results show that the greater the height difference between the double abrasives, the greater the polishing force in the machining process, resulting in higher surface bulge and deeper underground damage after polishing. When polishing with a single abrasive, the polishing depth plays a dominant role in the changes in polishing force, temperature and coordination number. When multiple abrasives are arranged at a certain angle, the force effect and damage distribution are more complex because of the coupling effect of abrasives. Due to the effect of multiple abrasives, the heat between abrasives cannot be dissipated in time. As a result, the temperature of multiple abrasives polishing at a certain angle is higher than that of the other two cases (single abrasive and double abrasives).