A Cryo-CMOS Low-Noise Amplifier With 2.3-to-8.5-K Noise Temperature at 20 K for Highly Integrated Radio-Astronomy Receivers

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS(2022)

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摘要
This letter presents a 0.9-1.8-GHz cryo-CMOS low-noise amplifier (LNA) built-in standard 65-nm CMOS for highly integrated radio astronomy receivers. The measured cryogenic noise parameters confirm noise matching in the band and demonstrate that the LNA nears its minimum noise temperature at the desired frequency range. The proposed LNA operates at 20 K, consumes 115 mW of power, and provides a 37.2 +/- 2.4 dB gain (S-21) with a noise temperature (figure) of 2.3 to 8.5 K (0.03 to 0.13 dB) and vertical bar S-11 vertical bar < -10 dB.
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关键词
CMOS integrated circuits, cryogenic electronics, low-noise amplifiers (LNAs), radio astronomy, scientific instrumentation
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