Direct growth of h-BN multilayers with controlled thickness on non-crystalline dielectric substrates without metal catalysts

We report an rGO-assisted CVD approach that enables the direct growth of high-quality single crystalline h-BN films with adjustable thickness and layered order on amorphous quartz and SiO2/Si substrates at relatively low temperatures. This work demonstrates a viable prototype for growing continuous ultrathin h-BN films on desired substrates without the requirement of lattice orientation, thus offering a great opportunity for their appealing applications.