Low-Temperature Plasma-Assisted Growth of Large-Area MoS2 for Transparent Phototransistors

MoS2-based transparent electronics can revolutionize the state-of-the-art display technology. The low-temperature synthesis of MoS2 below the softening temperature of inexpensive glasses is an essential requirement, although it has remained a long persisting challenge. In this study, plasma-enhanced chemical vapor deposition is utilized to grow large-area MoS2 on a regular microscopic glass (area approximate to 27 cm(2)). To benefit from uniform MoS2, 7 x 7 arrays of top-gated transparent (approximate to 93% transparent at 550 nm) thin film transistors (TFTs) with Al2O3 dielectric that can operate between -15 and 15 V are fabricated. Additionally, the performance of TFTs is assessed under irradiation of visible light and estimated static performance parameters, such as photoresponsivity is found to be 27 A W-1 (at lambda = 405 nm and an incident power density of 0.42 mW cm(-2)). The stable and uniform photoresponse of transparent MoS2 TFTs can facilitate the fabrication of transparent image sensors in the field of optoelectronics.