Bright zero-phonon transition from point defect-stacking fault complexes in silicon carbide nanowires
Conference on Lasers and Electro-Optics(2022)
摘要
We investigate a new type of quantum emitters, point defect-stacking fault complexes in silicon carbide nanowires. It record-high bright single-photon emission in silicon carbide and strong zero-phonon transition at even room temperature.
更多查看译文
AI 理解论文
溯源树
样例
![](https://originalfileserver.aminer.cn/sys/aminer/pubs/mrt_preview.jpeg)
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要