Transparency and Room Temperature Ferromagnetism in Diluted Magnetic Polycrystalline Zn1-Xcrxte Non- Oxide Ii-Vi Semiconductor Compounds

SSRN Electronic Journal(2022)

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Abstract
Polycrystalline Zn1−xCrxTe samples for x = 0.00, 0.05, 0.10, 0.15, 0.18, and 0.20 were synthesized by solid-state reaction, and their physical properties were studied for the purpose of identifying a novel non-oxide transparent diluted magnetic semiconductor (DMS). Their transport properties exhibit semiconducting behavior for low Cr concentrations and become conductors for higher Cr concentration concentrations. Ferromagnetic behavior was observed in Cr-doped ZnTe with Curie temperature Tc increasing as Cr concentration increases. At x = 0.20 Cr concentration, the system has Tc above room temperature, indicating an interesting II-VI ferromagnetic semiconductor. Furthermore, optical transparency in the visible light range was found to be 30–85 % for different Cr concentration concentrations. Also, according to the electrical transport measurement data in this study, the resistivity doesn’t exhibit any significant change as the temperature increases for x = 0.20. This consistent resistivity exhibits a possible candidacy for further studies of the sample Zn0.80Cr0.20Te for half-metallic ferromagnetic properties.
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Key words
ZnCrTe,Diluted magnetic semiconductor (DMS),Transition Metal Dichalcogenide (TMD),Half metallic ferromagnetism,Non -oxide transparent conductor,Room temperature ferromagnetism
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