Experimental Insights of Reverse Switching Charge for Antiferroelectric Hf0.1Zr0.9O2

IEEE Electron Device Letters(2022)

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摘要
Experimental insights into a reverse switching charge for antiferroelectric (AFE) Hf 0.1 Zr 0.9 O 2 are validated by pulse measurement and capacitance–voltage (C-V). The difference between saturation polarization ( $\text{P}_{\mathrm {S}}$ ) and remnant polarization ( $\text{P}_{\mathrm {r}}$ ) plays an important role in the model and is confirmed by the steep and gradual slope of the P-V loop, which is made by AFE and antiferroelectric-dielectric (AFE-DE), respectively. AFE capacitor yield far superior released charge ( $\text{Q}_{\mathrm {D}}$ ) than capacitor of AFE-DE bilayers due to strong reverse switching of $\text{P}_{\mathrm {S}}$ and $\text{P}_{\mathrm {r}}$ difference. A nonhysteretic $\text{Q}_{\mathrm {D}}$ scheme is proposed by alternating bipolar AFE operation without a DE to achieve a bidirectional enhancement. This work demonstrates an experimental $\text{Q}_{\mathrm {D}}$ enhancement by an AFE system and supports the reverse switching concept.
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关键词
antiferroelectric,reverse switching charge
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