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Experimental Insights of Reverse Switching Charge for Antiferroelectric Hf0.1Zr0.9O2

C. -Y. Liao, K. -Y. Hsiang, C. -Y. Lin, Z. -F. Lou,Z. -X. Li, H. -C. Tseng, F. -S. Chang, W. -C. Ray, C. -C. Wang, J. -Y. Lee, P. -H. Chen, J. -H. Tsai, M. -H. Liao, M. H. Lee

IEEE Electron Device Letters(2022)

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Abstract
Experimental insights into a reverse switching charge for antiferroelectric (AFE) Hf0.1Zr0.9O2 are validated by pulse measurement and capacitance-voltage (C-V). The difference between saturation polarization (P-S) andremnant polarization (P-r) plays an important role in the model and is confirmed by the steep and gradual slope of the P-V loop, which is made by AFE and antiferroelectric-dielectric (AFE-DE), respectively. AFE capacitor yield far superior released charge (Q(D)) than capacitor of AFE-DE bilayers due to strong reverse switching of P-S and P-r difference. A nonhysteretic Q(D) scheme is proposedby alternatingbipolarAFEoperation without a DE to achieve a bidirectional enhancement. This work demonstrates an experimental Q(D) enhancement by an AFE system and supports the reverse switching concept. Index
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Key words
Antiferroelectric,charge enhancement,reverse switching
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