The effect of zinc encapsulation on the Zn3P2-related p-type diffusion in semi-insulated InP substrates

Yiren Chen,Zhiwei Zhang,Guoqing Miao,Hong Jiang,Hang Song

Materials Letters（2022）

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摘要

•Distinguished from the insulating encapsulation, a zinc film is introduced as the cap layer.•The zinc encapsulation has both positive and negative effects on the Zn3P2-related doping.•The mechanisms involved in both positive and negative effects are clarified.

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关键词

Semiconductors,Diffusion,Surface,III-V materials,Zn3P2/Zn

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