Role of Elastic Scattering in Low-Energy Neutron-Induced SEUs in a 40-nm Bulk SRAM

IEEE Transactions on Nuclear Science(2022)

引用 2|浏览47
暂无评分
摘要
The contribution of mymargin elastic scattering to upsets caused by 1–10-MeV terrestrial neutrons in a 40-nm bulk SRAM and the influence of cascade recoils are investigated using Geant4 simulations. It is shown that elastic scattering, rather than ( $n$ , $p$ ) or ( $n$ , $\alpha$ ), is a dominant mechanism, contributing ~66% of the total upsets induced by 1–10-MeV neutrons. The dominance is attributed to the major role it plays in upset cross sections below ~6 MeV, and the abundance of lower energy neutrons due to $E^{- 1}$ dependence characteristic of the terrestrial neutron differential flux below 10 MeV. After considering ionization energy deposition of cascade recoils in Geant4 simulations, remarkable rises in upset cross sections of 27%, 18%, and 9% are observed for reactor, 2.5- and 1–10-MeV neutrons, which are the consequence of cascade recoils induced by primary Si ions. In-depth TRIM calculations on the ionization energy deposition of incident Si ions and cascade recoils have been performed, revealing that the underlying mechanism is the reduction in the threshold energy of Si ions from ~50 to ~30 keV if cascade recoils are taken into account.
更多
查看译文
关键词
Cascade recoils,Geant4,nanoscale integrated circuits,neutron-induced single-event upsets (NSEUs),static random access memory (SRAM),terrestrial neutrons,TRIM
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要