Effect of swift heavy silicon ion irradiation on TiO2 thin film prepared by micro arc oxidized technique

Titanium dioxide (TiO2) thin films were fabricated via a micro arc oxidized process and its surface was modified using 100 MeV Swift Heavy Si7+ ion (SHI) irradiation. GIXRD analysis confirmed both the phases of rutile and anatase. Additionally, the analysis showed a gradual decrease in intensity which coincided with a rise in ion fluence at up to 5 × 1012 ions/cm2, whereas; at higher fluence (1 × 1013 ions/cm2), the intensity was enhanced. SEM images showed agglomerated particles in the range 0.1–9 µm for pristine whereas; at higher fluences (1 × 1012 and 1 × 1013 ions/cm2) the particle dimensions reduced to a range within 0.1–3 µm. AFM exhibited uniform agglomerates with reduced particle size in the range 0.1–0.5 µm for fluences>1 × 1012 ions/cm2. Enhancement in reflectance was observed for irradiated samples than what was seen in pristine. Irradiation led to a decrease in band gap to 1.4 eV (1 × 1013 ions/cm2) from 1.8 eV (pristine) due to an increase in the defects’ energy level. Surface wettability, roughness, in vitro bioactivity, and irradiated film attachment to the cells are enhanced. Hence, these analytical results demonstrate that the irradiated film is an excellent implant and would be useful in orthopedic applications.