Dielectric properties and negative-capacitance/dielectric in Au/n-Si structures with PVC and (PVC:Sm2O3) interlayer

Both Au-(n-Si) (MS) structures with & without PVC and (Sm2O3-PVC) interlayer (MPS) has been performed onto n type Si wafer to compare dielectric and electric-modulus properties of them between 200 Hz and 1 MHz at 1.5 V bias voltage. Experimental results show that both the real and imaginary parts of complex-dielectric (ε′, ε″) for 1.5 V show quite more changes at lower frequencies and then they become almost frequency-independent at higher-frequencies for three structures. While electrical conductivity of them is almost frequency independent for lower-frequencies and then start increases as almost exponentially for higher-frequencies which are corresponding dc and ac conductivity, respectively. But this increase in conductivity for MPS structures are considerably higher than MS structures due to raise the interfacial polarization and therefore reduce of the series-resistance (Rs). The observed negative capacitance or negative dielectric constant values at low frequencies was attributed to the saturation effect of interface trap levels and interfacial & dipole polarizations at transition frequency, and the differential effect of electric-charge (Q) with respect to C = dQ/dV. The observed minimum-values of C or ε′ and maximum-values of G/ω or ε″ at high frequencies for here type structures were attributed to the “inductive” behavior of the structure.