A Silicon-On-Insulator Lateral IGBT With Segmented Trenches for Improving Short-Circuit Withstanding Capability

For the first time, a silicon-on-insulator (SOI) lateral insulated gate bipolar transistor (LIGBT) featuring segmented deep oxide trenches (SDOTs) is proposed, which aims to suppress the saturation current ( ${I}_{\text {sat}}$ ) and enhance the short-circuit withstanding capability. SDOTs, refilled by the polysilicon and shorted to the emitter electrode, are inserted in the region nearby the inversion channel. In the ON-state, the electric potential at the channel end can be modified and effectively lowered by the grounded SDOTs, which indicates the reduced ${I}_{\text {sat}}$ and prolonged short-circuit withstanding time ( ${t}_{\text {SC}}$ ). Compared with the conventional SOI LIGBT, the proposed SOI LIGBT achieves a 49.5% decrease in ${I}_{\text {sat}}$ at ${V}_{\text {CE}} = {10}$ V and ${V}_{\text {GE}} = {15}$ V, and a 406% increase in ${t}_{\text {SC}}$ at ${V}_{\text {CE}} = {400}$ V and ${V}_{\text {GE}} = {15}$ V.