Analysis of interface roughness in strained InGaAs/AlInAs quantum cascade laser structures (λ ∼ 4.6 μm) by atom probe tomography

B. Knipfer,S. Xu,J. D. Kirch,D. Botez, L. J. Mawst

Journal of Crystal Growth（2022）

引用 6|浏览8

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摘要

•Full QCL structure emitting at λ ∼ 4.55um with strained layers analyzed via APT.•Highest strain interface (5.1% strain differential) showed 50% greater roughness.•Experimental results showing a relation between strain and interface roughness.

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关键词

A1. Atom probe tomography,A1. Interfaces,A3. Organometallic vapor phase epitaxy,A3. Superlattices,B2. Semiconducting III-V materials,B3. Quantum cascade lasers

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