Effect of growth interruption on Ga(N, As)/Ga(As, Sb)/Ga(N, As) type-II-“W” quantum well heterostructures

Jannik Lehr,Lukas Hellweg,Christian Fuchs,Saleh Firoozabadi,Pirmin Kukelhan,Andreas Beyer,Kerstin Volz,Wolfgang Stolz

Journal of Crystal Growth（2022）

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摘要

•MOVPE growth of Ga(N,As)/Ga(As,Sb)/Ga(N,As) type-II-“W” quantum well heterostructures.•Investigation of the quality of the buried interface.•N incorporation efficiency is improved by desorption of surface segregated Sb atoms.

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关键词

A1 Characterization,A3 Metalorganic vapor phase epitaxy,A3 Quantum wells,B2 Semiconducting gallium arsenide,B2 Semiconducting III-V materials,B3 Light emitting diodes

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