Surface Debye temperature determination from LEED: correlation to defects in epitaxial films

Matheus C. Adam, Nazban Darukhanawalla, James M. Gaudet, Guenevere O'Hara, Paige Harford, Greg Hall,Jozef Ociepa,Marc H. Weber,Peter J. Simpson,Lyudmila V. Goncharova

Surface Science（2022）

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摘要

•Surface Debye T depends on defect density in the surface and near-surface layers.•Larger defect concentration results in lower surface Debye temperature.•LEED may have potential as a quantitative tool for defect characterization.•LEED results were correlated with ion channeling and positron annihilation.•Empirical relation between Debye T and defect concentration was found for Si(001).

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关键词

Surface Debye temperature,Low energy electron diffraction (LEED),Defects,Epitaxial films,Positron annihilation spectroscopy (PAS),Si (001) surface

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