Study on Surface Defects of Monocrystalline Silicon Caused by Argon Ion Beam with Different Energies

In order to study the lattice damage caused by low-energy argon ions on the single crystal silicon substrate and the influence of incident energy on the substrate damage during the ion beam polishing process, the molecular dynamics (MD) was used to simulate the incidence of a single argon ion on the single crystal silicon substrate. Compare the lattice defects produced by the bombardment of single crystal silicon by ions of different incident energy. Ion beams with different incident energy were used to polish the surface of single crystal silicon, and the surface roughness after polishing was compared. Experimental and simulation results show that ion bombardment will cause lattice damage to the surface of the substrate. As the energy increases, the range of lattice damage will expand and the resulting lattice defects will be more dispersed. The use of low-energy (200~600eV) ion beams can further reduce the surface roughness of the substrate on the basis of reducing lattice damage