Ultra-high phase transition amplitude of Fe-doped high-performance VO2 films manufactured by DC-magnetron sputtering for modulation application

In the field of electronic modulation, vanadium dioxide (VO2) is a potential material owing to its function of automatic insulator-to-metal transition (MIT) which can induce rapid changes in electrical resistivity through MIT. Nevertheless, the application of modulator based on VO2 is limited by some performance shortcomings, including wide hysteresis loop width (Delta H), high phase transition temperature (T-c) as well as low phase transition amplitude (A(MIT)). In this work, by DC (Direct-Current)-magnetron sputtering with doping Fe3+ into VO2 films, narrowed Delta H and decreased T-c are observed. Interestingly, the Fe doped VO2 films show ultra-high phase transition amplitude despite the low T-c due to the influence of Fe dopants. Specifically, the 0.5% Fe-doped VO2 film shows the best MIT characteristics with ultra-high phase transition amplitude of 10(4), narrow Delta H decreased to 9.8 degrees and low T-c around 60.02 degrees C, which is considered to be the first time to highly heighten the electrical MIT properties by Fe doping. In addition, we also comprehensively studied the influences of doping with Fe element on the MIT properties and microstructures based on characterization such as SEM, XRD, Raman shift and XPS results. These results show that our unique preparation method can manufacture VO2 thin films with excellent MIT properties, which will be beneficial to the popularization and publicity of VO2 based electrical modulator.