Numerical and experimental investigation on mc-Silicon growth process by varying the Si3N4 coating thickness of crucible

•The effect of Si3N4 thickness on impurity concentration has been investigated.•The concentration of carbon monoxide and silicon oxide in the gas domain has been investigated.•The concentration of carbon, oxygen and silicon carbide in the grown mc-Si ingots by varying the Si3N4 thickness.•200 μm Si3N4 coated crucible was used in the experiment.•The central wafer shows the minority carrier lifetime of 91.5 μs.