Pulling thin single crystal silicon wafers from a melt: The new leading-edge solar substrate

Parthiv Daggolu, Jesse Appel,Peter Kellerman,Nathan Stoddard

Journal of Crystal Growth（2022）

Cited 3|Views2

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Abstract

•Single crystal silicon ribbons at M2-M6 can be made by the Floating Silicon Method.•A new type of crystal morphology called an “internal side effect” is described.•The crystal growth process is proposed in 3D via facet flow from a thin platelet.•The silicon wafers are lower in oxygen than Czochralski-derived material.

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Key words

A2. Horizontal ribbon growth,A1. Single crystal growth,A1. Growth models,A1. Interfaces,A1. Interface kinetics,A1. Roughening

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