Thermal synthesis of Ga2O3/SnO2 core–shell nanowires and their structural characterization

Ga2O3 core–SnO2 shell nanowires were synthesized by thermal evaporation of the metallic sources (Ga, Sn) in a horizontal quartz tube furnace at atmospheric pressure and in an oxidizing atmosphere. Au thin layers and 200 ppm Au colloid were applied as growth catalyst of Ga2O3 nanowires in vapor–liquid–solid method. Then the SnO2 shells were grown on the Ga2O3 nanowires cores. The configuration with highly sensitive shell and a relatively low conductivity core should enhance the efficiency of sensors based on these materials. Such narrowing of conductive area where a depletion of the charge carriers may occur, should increase the sensitivity, response and recovery time. The structural and material composition characterization of nanowires was performed by X-ray diffraction, energy-dispersive X-ray and Raman spectroscopy. The lattice parameters and strain of SnO2 shell were calculated. Using the catalyst in the form of a 200 ppm Au colloid compared to Au thin film, Ga2O3/SnO2 nanowires more similar to the core–shell structures were obtained.