Structural and electrical investigation of MI2M and MI3M diodes for improved non-linear, low bias rectification

I. Nemr Noureddine,N. Sedghi,J.S. Wrench,I.Z. Mitrovic,P.R. Chalker,S. Hall

Solid-State Electronics（2022）

Cited 0|Views15

No score

Abstract

•Band gap engineering is investigated focusing on experimental-to-model matching.•Native oxide grown at interfaces with Al electrodes: assessed with structural imaging.•Tunnelling mechanisms are assessed using transfer matrix and WKB methods.•MI3M/MI2M fabricated: highly non-linear at turn-on voltages of 0.17/0.21 V.•Active area minimisation: prospects for ultra high-speed applications towards THz.

Translated text

Key words

Multi-dielectric diode,Native oxide,Tunnelling,Tsu-Esaki model,Transfer matrix method,WKB approximation,THz rectification,Rectenna

AI Read Science

Must-Reading Tree

Example

Generate MRT to find the research sequence of this paper

Chat Paper

Summary is being generated by the instructions you defined