Hydrothermally formed copper oxide (CuO) thin films for resistive switching memory devices

Robert Mroczy,Monika Ozga,Marek Godlewski,Bartlomiej S. Witkowski

Solid-State Electronics（2022）

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摘要

•An innovative method of hydrothermal formation of CuO films adopted to MIM structures.•Distinct changes in structural and optical properties of ‘as grown’ and ‘HT + RTP’ films observed.•Stability of resistive switching characteristics and larger LRS/HRS ratio of MIM structures with annealed CuO.•Obtained retention approximated to ten years proved the potential application of CuO in RRAM devices.

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关键词

CuO,MIM,RRAM,Electrical characterization,Optical and structural properties

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