Mechanism of crack formation in strained SiGe(1 1 1) layers
Journal of Crystal Growth(2022)
摘要
•It was found the crack formation was suppressed for the SiGe on the patterned GOS.•SiGe layers on the patterned GOS was completely strained.•Crack formation was caused by propagation.
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关键词
A1. Defects,A1. Surface structure,A3. Molecular beam epitaxy,B1. Germanium silicon alloys,B2. Semiconducting silicon compounds
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