Growth of GaAsBi/GaAs multiple quantum wells with up to 120 periods

Thomas B. O. Rockett, Nada A. Adham,Faezah Harun,John P. R. David,Robert D. Richards

Journal of Crystal Growth（2022）

引用 3|浏览1

暂无评分

摘要

•Epilayers with up to 120 GaAs0.95Bi0.05 quantum wells grown using MBE.•Thicker 30 nm GaAs barriers reduce average strain compared to previous devices.•XRD and TEM show reasonable uniformity, which decreases as number of wells increases.•120 period device properties much improved over previous strain relaxed 63 QW device.

查看译文

关键词

A1.X-ray diffraction,A3.Molecular beam epitaxy,B1.Bismuth compounds,B2.Semiconducting III-V materials,B3.Solar cells

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要