Characteristics of noise degradation and recovery in gamma-irradiated SOI nMOSFET with in-situ thermal annealing

S. Amor,V. Kilchytska,F. Tounsi,N. Andre,M. Machhout,L. A. Francis,D. Flandre

Solid-State Electronics（2022）

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摘要

•Studying the benefits of in-situ thermal annealing to recover nMOSFET after irradiation.•Noise measurements confirms the creation of oxide defects at the gate-oxide after irradiation.•The radiation-induced trap is estimated to be localized at 5.4 nm from the Si-SiO2 interface.•Total recovery of the initial characteristics has been achieved in the nMOS transistor.

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关键词

Silicon-on-Insulator (SOI),MOSFET,Gamma irradiation,Total Ionizing Dose (TID),In-Situ Thermal Annealing,Flicker noise,RTN noise,Radiation-induced defects

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