A Room-Temperature Ferroelectric Resonant Tunneling Diode

Resonant tunneling is a quantum-mechanical effect in which electron transport is controlled by the discrete energy levels within a quantum-well (QW) structure. A ferroelectric resonant tunneling diode (RTD) exploits the switchable electric polarization state of the QW barrier to tune the device resistance. Here, the discovery of robust room-temperature ferroelectric-modulated resonant tunneling and negative differential resistance (NDR) behaviors in all-perovskite-oxide BaTiO3/SrRuO3/BaTiO3 QW structures is reported. The resonant current amplitude and voltage are tunable by the switchable polarization of the BaTiO3 ferroelectric with the NDR ratio modulated by approximate to 3 orders of magnitude and an OFF/ON resistance ratio exceeding a factor of 2 x 10(4). The observed NDR effect is explained an energy bandgap between Ru-t(2g) and Ru-e(g) orbitals driven by electron-electron correlations, as follows from density functional theory calculations. This study paves the way for ferroelectric-based quantum-tunneling devices in future oxide electronics.