Packaging and Characterization of a Novel 7.2kV/85A SiC Austin SuperMOS Half-Bridge Intelligent Power Module (IPM)

This paper introduces the packaging and characterization of a novel 7.2kV/85A SiC Austin SuperMOS half-bridge intelligent power module (IPM). Based on the Austin SuperMOS concept and die-level packaging integration, the IPM exhibits much lower power loop parasitic inductance than previous designs. Direct bonded copper (DBC) substrate is utilized to achieve an excellent thermal performance as well as high voltage insulation required for a 7.2 kV IPM. Half-bridge gate drivers with integrated protection and isolated power supplies are also integrated into the IPM. The thermal and electric performance of the developed IPM is presented in the paper. Soft switching performance of the IPM is further analyzed.