Mechanism Governing Surface Roughening of Al Ion Implanted 4H-SiC during Annealing under a C-Cap

Encapsulating SiC with a carbon layer (C-cap) is a widely used technique to avoid step bunching during post implantation annealing. In this work we propose a mechanism that explains the roughening that the surface unavoidably undergoes during annealing under the C-cap. We investigated the reactions occurring at the interface between 4H-SiC and the C-cap by scanning electron microscopy, energy-dispersive X-ray spectroscopy, and atomic force microscopy carried out at different stages of the sample processing: just after annealing, after C-cap removal in dry Oxygen, and after cleaning in buffered oxide etch solution. Our observations show that, even though the C-cap roughens for increasing annealing temperature and time, it is not visibly damaged even after 1950 °C 30 min annealing. After the C-cap removal the 4H-SiC surface was covered by a network of clusters that are eventually removed by buffered oxide etch solution. This occurrence suggests that, during the post-implantation annealing, the 4H-SiC surface decomposes and the escaped Si and C atoms are trapped inside the C-cap or at the interface between 4H-SiC and the C-cap. While C clusters are etched off in the dry O2 atmosphere, the Si clusters oxidize and form SiO2 nanoparticles which are finally etched by buffered oxide etch.