Introducing Foundry-Compatible SiC and GaN Trench Processing Technologies for Reliable Automotive Application
Materials Science Forum(2022)
摘要
In this paper we report the progress of our SiC trench etch development using enhanced ICP-based etch technology. Computer modelling of the electric field strength in the gate oxide as a function of corner geometry was used to illustrate trench corner rounding as an effective method to avoid to high gate oxide field strengths. This is an effort to examine a major ongoing issue in device reliability, and to govern future device design.
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关键词
gan trench processing technologies,sic,reliable automotive application,foundry-compatible
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