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Characterization and Modeling of a 1.3 Kv Vertical GaN Diode

Prakash Pandey,William Collings,Sadab Mahmud,Tolen Nelson,Michael R. Hontz,Daniel G. Georgiev,Andrew D. Koehler,Travis J. Anderson,James C. Gallagher,Geoffrey M. Foster,Alan Jacobs,Mona A. Ebrish,Karl D. Hobart,Raghav Khanna

2022 IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION, APEC（2022）

Cited 1|Views27
Key words
gallium nitride,vertical GaN,switching characterization,reverse recovery,edge termination,p plus plus cap
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