P‐12: Exponential Dependence of Photocurrent on Reciprocal of Channel Length in Amorphous InZnO Thin‐Film Transistors with Short Channel

With downscaling the channel length (L) of amorphous InZnO (a‐IZO) thin‐film transistors (TFTs), the photocurrent (I ph ) of long‐channel TFTs evolved linearly with 1/L, while an exponential dependence of I ph on 1/L was found for TFTs with relatively shorter channels, resulting in a significantly enhanced photo‐responsivity with short‐channel a‐IZO phototransistors. This is attributed to a source barrier lowering effect happening in the short‐channel photo‐TFTs under illumination. Such an accelerated I ph rising with L downscaling could be used to implement high responsivity of photoelectric detectors and image sensors.