Access Modelling-based De-embedding Method for High-frequency Characterization of Uni-traveling carrier Photodiodes

This paper presents a new one-port de-embedding method demonstrated on a uni-traveling carrier photodiode (UTC-PD) technology for reliable on-wafer high frequency characterization. This method is based on small-signal modelling of RF pads and access lines connected to the active area of the UTC-PD. The new method has been investigated, validated and compared to conventional methods up to 110 GHz. Moreover, the extraction of electrical equivalent circuit elements of the UTC-PD has been validated and compared with conventional methods up to 110 GHz.