Влияние интеркаляции золота на электронную структуру графена на Co-Si/SiC(0001)

Investigation of graphene on an ultrathin CoSi/CoSi2 cobalt silicide layer on a SiC(0001) substrate after the Au intercalation has been carried out. It was shown that deposition of Au and subsequent annealing of the system at a temperature of 500°C leads to the intercalation of Au atoms and the formation of gold silicide under graphene with a stoichiometry close to that of Au2Si. The study of the electronic structure of the system in the region of the K point of the surface Brillouin zone revealed the quasi-freestanding character of graphene with a linear spectrum of π states and a Dirac point near the Fermi level. The measurements using photoelectron microscopy showed the homogeneity of the work function along the surface of the sample on a micrometer scale.