Device Study on OTS-PCM for Persistent Memory Application : IBM/Macronix Phase Change Memory Joint Project

W. C. Chien,L. M. Gignac,Y. C. Chou,C. H. Yang,N. Gong,H. Y. Ho,C. W. Yeh,H. Y. Cheng,W. Kim,I. T. Kuo,E. K. Lai,C. W. Cheng,L. Buzi,A. Ray,C. S. Hsu,D. Daudelin,R. L. Bruce,M. BrightSky,H. L. Lung

2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)（2022）

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关键词

effective thickness concept,sub-threshold slope,high density cross-point OTS-PCM application,1Mb cross-point PCM ADM,device study,persistent memory application,trap limited model,OTS-PCM devices,thickness effect

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