Dark-Current-Blocking Mechanism in BIB Far-Infrared Detectors by Interfacial Barriers

Changyi Pan,Ziwei Yin,Zhiyong Song,Yao Yao,Yi Zhang,Jiaming Hao,Tingting Kang,Huiyong Deng,Huizhen Wu,Ning Dai

IEEE Transactions on Electron Devices（2021）

Cited 5|Views21

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Abstract

We fabricate Ge:B-blocked impurity band (BIB) far-infrared detectors using near-surface processing techniques. The current–voltage ( ${I}$ – ${V}$ ) characteristics and the energy band structure are investigated. It is found that there are three interfacial barriers in Ge:B BIB detectors due to the bandgap narrowing effect. The barrier height can be adjusted by changing the doping concentration in...

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Key words

Detectors,Dark current,Impurities,Doping,Resistance,Temperature distribution,Plasma temperature

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