Polarity-dependent threshold voltage shift in ovonic threshold switches: Challenges and opportunities

Taras Ravsher,Robin Degraeve,Daniele Garbin,Andrea Fantini,Sergiu Clima,Gabriele Luca Donadio,Shreya Kundu,Hubert Hody,Wouter Devulder,Jan Van Houdt,Valeri Afanas'ev,Romain Delhougne,Gouri Sankar Kar

2021 IEEE International Electron Devices Meeting (IEDM)（2021）

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摘要

In this paper we investigate the operation of Si-Ge-As-Te Ovonic Threshold Switch (OTS) selectors under bipolar pulses. We observe that the threshold voltage increases noticeably if the previous pulse had opposite polarity. This effect is consistently present under different test conditions and persists for a long time (>1000s). We also investigate its impact on 1S1R operation, and discuss possible applications, such as OTS-only memory element.

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关键词

OTS-only memory element,OTS selectors,1S1R operation,Si-Ge-As-Te ovonic threshold switch selectors,opposite polarity,bipolar pulses,polarity-dependent threshold voltage shift,Si-Ge-As-Te

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